EMB60N06A Datasheet
EMB60N06A Datasheet (VBsemi)
VBsemi
EMB60N06A-VB EMB60N06A-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS= 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) .
* Trench Power MOSFET
* 100 % Rg and UIS Tested
* Material categorization:
For definitions of compliance please see
APPLICATIONS
* DC/DC Converters
* DC/AC Inverters
* Motor Drives
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit.
EMB60N06A Datasheet (Excelliance MOS)
Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 60mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE M.
RAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs STA.