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FCB110N65F Datasheet

The FCB110N65F is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFCB110N65F
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.
*Drain Current
  –ID= 35A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.
Part NumberFCB110N65F
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate c.
* 700 V @TJ = 150°C
* Typ. RDS(on) = 96 mΩ (Typ.)
* Ultra Low Gate Charge (Typ. Qg = 98 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
* 100% Avalanche Tested
* RoHS Compliant Applications
* Telecom/Server Power Supplies
* Solar Inverters
* Computing Power Supplies
* FPD TV Pow.