The FDB2670 is a N-Channel MOSFET.
| Package | TO-263-3 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -65 °C |
| Part Number | FDB2670 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and .
* 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V * Low gate charge (27 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings . |
| Part Number | FDB2670 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench te. 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 253 | 210+ : 1.7875 USD 500+ : 1.7 USD 1000+ : 1.6 USD 10000+ : 1.5125 USD |
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| Verical | 822 | 210+ : 1.7875 USD 500+ : 1.7 USD 1000+ : 1.6 USD 10000+ : 1.5125 USD |
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| Verical | 2045 | 210+ : 1.7875 USD 500+ : 1.7 USD 1000+ : 1.6 USD 10000+ : 1.5125 USD |
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