FDC5614P Datasheet and Specifications PDF

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FDC5614P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = - 10 V - 60 0.085 at VGS = - 4.5 V ID (A)a - 3.5 - 3.1 Qg (Typ.) 5.1 nC FEATURES • Halog.

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET APPLICATIONS
* Load Switch 3 mm TSOP-6 Top V iew 1 6 2 5 3 4 2.85 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Volt.

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) =.

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*3 A,
*60 V. RDS(ON) = 0.105 Ω @ VGS =
*10 V RDS(ON) = 0.135 Ω @ VGS =
*4.5 V Applications
* DC-DC converters
* Load switch
* Power management
* Fast switching speed
* High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum R.