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FDC5614P - 60V P-Channel Logic Level PowerTrench MOSFET

General Description

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process.

It has been optimized for power management applications.

Key Features

  • 3 A,.
  • 60 V. RDS(ON) = 0.105 Ω @ VGS =.
  • 10 V RDS(ON) = 0.135 Ω @ VGS =.
  • 4.5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC5614P February 2002 FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V Applications • DC-DC converters • Load switch • Power management • Fast switching speed • High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –60 ±20 (Note 1a) Units V V A W °C –3 –20 1.6 0.