FDC5614P Description
This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
FDC5614P Key Features
- 3 A, -60 V
- RDS(on) = 0.105 W @ VGS = -10 V
- RDS(on) = 0.135 W @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This is a Pb-Free and Halide Free Device