| Part Number | FDC6333C Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These N & P−Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
.
* Q1 2.5 A, 30 V * RDS(on) = 95 mW @ VGS = 10 V * RDS(on) = 150 mW @ VGS = 4.5 V * Q2 *2.0 A, *30 V * RDS(on) = 130 mW @ VGS = *10 V * RDS(on) = 220 mW @ VGS = *4.5 V * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * SUPERSOTt *6 Package: Small Footprint (72% Smaller . |
FDC6333C Datasheet and Specifications PDF
The FDC6333C is a N- & P-Channel Power MOSFET.
Key Specifications
| Package | SOT-23-6 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1 mm |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDC6333C Datasheet |
|---|---|
| Description | 30V N & P-Channel PowerTrench MOSFETs |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switch.
* Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V * Q2 *2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = *10 V RDS(ON) = 220 mΩ @ VGS = *4.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON). * SuperSOT *6 package: small footprint (72% smaller than SO-. |