The FDC6506P is a Dual P-Channel Logic Level PowerTrench MOSFET.
| Package | SOT-23-6 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1.1 mm |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDC6506P Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gat.
* -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V * * * * Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm th. |
| Part Number | FDC6506P Datasheet |
|---|---|
| Description | Dual P-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
Features
These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low.
These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
* -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0. |
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