FDC6506P Datasheet and Specifications PDF

The FDC6506P is a Dual P-Channel Logic Level PowerTrench MOSFET.

Key Specifications

PackageSOT-23-6
Mount TypeSurface Mount
Pins6
Height1.1 mm
Length3 mm
Width1.7 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFDC6506P Datasheet
ManufacturerFairchild Semiconductor
Overview These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gat.
* -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
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* Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm th.
Part NumberFDC6506P Datasheet
DescriptionDual P-Channel MOSFET
Manufactureronsemi
Overview Features These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low. These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
* -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.

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