| Part Number | FDD3510H Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and ye.
Q1: N-Channel * Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A * Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel * Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A * Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A * 100% UIL Tested * RoHS Compliant General Description These dual N and P- Channel en. |
FDD3510H Datasheet and Specifications PDF
The FDD3510H is a Dual N & P-Channel Power MOSFET.
| Part Number | FDD3510H Datasheet |
|---|---|
| Description | Dual N&P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance a.
Q1: N-Channel * Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A * Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel * Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A * Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A * 100% UIL Tested * RoHS Compliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A. |