Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Inverter
H-Bridge
Features
- Q1: N-Channel.
- Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
- Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
- Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
- Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
- 100% UIL Tested.
- RoHS Compliant
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General.
FDD3510H Datasheet
