Datasheet Summary
FDD3510H Dual N & P-Channel PowerTrench ® MOSFET
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
Q1: N-Channel
- Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
- Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
Q2: P-Channel
- Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
- Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
- 100% UIL Tested
- RoHS pliant
General Description
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.
Applications
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