The FDD3N50NZ is a N-Channel UniFET II MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Fairchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among t.
* RDS(on) = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A
* Low Gate Charge (Typ. 6.2 nC)
* Low Crss (Typ. 2.5 pF)
* 100% Avalanche Tested
* Improved dv/dt Capability
* ESD Imoroved Capability
* RoHS Compliant
Applications
* LCD/LED/PDP TV
* Lighting
* Uninterruptible Power Supply
November 2013
Descriptio.
VBsemi
FDD3N50NZ Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.8 48 12 19 Single FEATURES • Low Gate Charge Qg Re.
* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC
TO-252
GDS Top View
D
G S
N-Channel MOSFET
AB.
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