FDD6606 Datasheet and Specifications PDF

The FDD6606 is a 30V N-Channel PowerTrench MOSFET.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Max Operating Temp175 °C
Min Operating Temp-55 °C
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Part NumberFDD6606 Datasheet
ManufacturerFairchild Semiconductor
Overview This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast switching
* High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter .
Part NumberFDD6606 Datasheet
Description30V N-Channel PowerTrench MOSFET
ManufacturerAdvanced Analogic Technologies
Overview This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
* Low gate charge
* Fast switching
* High performance trench technology for extremely low RDS(ON) Applications
* DC/DC converter
* Motor Drives D G S D G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maxim.

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