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FDD6606 Datasheet 30v N-channel Powertrench MOSFET

Manufacturer: Advanced Analogic Technologies

Overview: FDD6606 February 2004 FDD6606 30V N-Channel PowerTrench MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Key Features

  • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON).

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