Advanced Analogic Technologies FDD6606
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.| Part No. | FDD6606 |
|---|---|
| Datasheet | FDD6606 Download |
| Manufacturer |  Advanced Analogic Technologies |
| Description | 30V N-Channel PowerTrench MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V● Low gate charge
● Fast switching
● High performance trench technology for extremely low RDS(ON)
APPLICATIONS
● DC/DC converter● Motor Drives D G S D G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ± 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V A W 75 100 71 3.8 1.6 –55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.1 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6606 Device FDD6606 Package D-PAK (TO-252) Reel Size 13’’ Tape width 12mm Quantity 2500 unit...
