FDD6606 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Key Features
- 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
- Low gate charge
- Fast switching
- High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S
