FDD8874 Datasheet and Specifications PDF

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.

*Drain Current
*ID= 116A@ TC=25℃
*Drain Source Voltage- : VDSS= 30V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.1mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.

* rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* RoHS Compliant D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC.