Datasheet4U Logo Datasheet4U.com

FDD8874 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 116A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 30V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 5.1mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD8874 N-Channel MOSFET Fairchild Semiconductor
FDD8870 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDD8870-F085 N-Channel MOSFET On Semiconductor
FDD8870_F085 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDD8876 N-Channel PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FDD86102LZ N-Channel MOSFET
FDD86250 N-Channel MOSFET
FDD8N50NZ N-Channel MOSFET
FDD3682 N-Channel MOSFET
FDD770N15A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 116A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 116 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 110 W TJ Max.