Datasheet Details
| Part number | FDD8874 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.09 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8874-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | FDD8874 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.09 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8874-INCHANGE.pdf |
|
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 116 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 110 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.38 ℃/W FDD8874 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDD8874 | N-Channel MOSFET | Fairchild Semiconductor |
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