FDD8876 Datasheet | Fairchild Semiconductor

FDD8876 / FDU8876 March 2015 FDD8876 / FDU8876 N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications - DC/DC converters Features - rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A - rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A - High performance trench technology for extremely low rDS(ON) - Low gate charge - High power and current handling capability - RoHS pliant S DTO-P-2A5K2 (TO-252) I-PAK (TO-251AA) MOSFET...