Datasheet4U Logo Datasheet4U.com

FDD8876 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters Fea

Key Features

  • rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD8870-F085 N-Channel MOSFET On Semiconductor
FDD8874 N-Channel MOSFET INCHANGE
FDD8880 N-Channel MOSFET ON Semiconductor
FDD8896 N-Channel Power MOSFET ON Semiconductor
FDD8896-F085 N-Channel MOSFET On Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDD8870 N-Channel PowerTrench MOSFET
FDD8870_F085 N-Channel PowerTrench MOSFET
FDD8874 N-Channel MOSFET
FDD8878 N-Channel MOSFET
FDD8880 N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD8876 / FDU8876 March 2015 FDD8876 / FDU8876 N-Channel PowerTrench® MOSFET 30V, 73A, 8.2mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A • rDS(ON) = 10mΩ, VGS = 4.