FDD8870 Datasheet | Fairchild Semiconductor

FDD8870 / FDU8870 September 2004 FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features - r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A - r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge Applications - DC/DC converters - High power and current handling capability I-PAK (TO-251AA) G D S D-PAK TO-252...