FDD8870 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
FDD8870 Key Features
- r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A
- r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A
- High performance trench technology for extremely low r DS(ON)
- Low gate charge