Datasheet Details
| Part number | FDD8878 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 374.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8878_FairchildSemiconductor.pdf |
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Overview: FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET March 2015 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A,.
| Part number | FDD8878 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 374.39 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDD8878_FairchildSemiconductor.pdf |
|
|
|
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
rDS(ON) Low gate charge High power and current handling capability Application DC / DC Converters RoHS Compliant D G S D-PAK (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev.1.2 1 www.fairchildsemi.com FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 2) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 40 36 11 Figure 4 25 40 0.27 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3.75 100 52 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDD8878 FDU8878 F F Device FDD8878 FDU8878 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Vol
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