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FDG1024NZ Datasheet

The FDG1024NZ is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDG1024NZ
ManufacturerFairchild Semiconductor
Overview This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially t. „ Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A „ Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A „ Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A „ Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A „ HBM ESD protection level >2 kV (Note 3) „ Very low level gate drive requirements allowing operatio.
Part NumberFDG1024NZ
DescriptionDual N-Channel MOSFET
Manufactureronsemi
Overview This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tail.
* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A
* HBM ESD Protection Level > 2 kV (Note 3)
* Very Low Level Gate Drive Requirements Allowing Operati.
Part NumberFDG1024NZ
DescriptionDual N-Channel MOSFET
ManufacturerVBsemi
Overview FDG1024NZ FDG1024NZ Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.086 at VGS = 4.5 V 0.110 at VGS = 2.5 V 0.180 at VGS = 1.8 V ID (A)a 2.6a 2.5 a 2.3 a.
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Typical ESD Protection 2100 V HBM
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Load Switch for Portable Applications D1 D2 G2 D2 3 4 S2 Top View S1 S2 ABSOLUTE MAXIMUM RATINGS (TA.