| Part Number | FDH038AN08A1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MOSFET – N-Channel, POWERTRENCH)
75 V, 80 A, 3.8 mW
FDH038AN08A1
Features
RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 125 nC (Typ.), VGS = 10 V Low Miller Charge Low Qrr Body Di.
* RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A * Qg (tot) = 125 nC (Typ.), VGS = 10 V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * This Device is Pb *Free and is RoHS Compliant Applications * Synchronous Rectification for ATX / Server / Telecom PSU. |
FDH038AN08A1 Datasheet and Specifications PDF
The FDH038AN08A1 is a N-Channel MOSFET.
Key Specifications
| Package | TO-247 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 20.82 mm |
| Length | 15.87 mm |
| Width | 4.82 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDH038AN08A1 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Res.
* r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A * Qg(tot) = 125nC (Typ.), VGS = 10V * Internal Gate Resistor, Rg = 20Ω (Typ.) * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D . |