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FDH038AN08A1 - N-Channel MOSFET

Key Features

  • r DS(ON) = 3.5mΩ (Typ. ), V GS = 10V, ID = 80A.
  • Qg(tot) = 125nC (Typ. ), VGS = 10V.
  • Internal Gate Resistor, Rg = 20Ω (Typ. ).
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D.

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Full PDF Text Transcription (Reference)

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FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.