Fairchild Semiconductor FDH038AN08A1
N-Channel MOSFET
| Part No. | FDH038AN08A1 |
|---|---|
| Datasheet | FDH038AN08A1 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A● Qg(tot) = 125nC (Typ.), VGS = 10V
● Internal Gate Resistor, Rg = 20Ω (Typ.)
● Low Miller Charge
● Low QRR Body Diode
● UIS Capability (Single Pulse and Repetitive Pulse)
● Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D
APPLICATIONS
● 42V Automotive Load Control● Starter / Alternator Systems
● Electronic Power Steering Systems
● Electronic Valve Train Systems
● DC-DC converters and Off-line UPS
● Distributed Power Architectures and VRMs
● Primary Switch for 24V and 48V systems TO-247 S MOSFET
MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 158oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, with Rθ JA = 30oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 22 Figure 4 1.17 450 3.0 -55 to 175 A A A J W W/...
