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FDH038AN08A1 - N-Channel MOSFET

Key Features

  • RDS(ON) = 3.5 mW (Typ. ), VGS = 10 V, ID = 80 A.
  • Qg (tot) = 125 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 75 V, 80 A, 3.8 mW FDH038AN08A1 Features  RDS(ON) = 3.5 mW (Typ.), VGS = 10 V, ID = 80 A  Qg (tot) = 125 nC (Typ.