| Part Number | FDH50N50 |
|---|---|
| Manufacturer | onsemi |
| Overview |
UniFET MOSFET is ON Semiconductor’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching perfor.
* RDS(on) = 89 mW (Typ.) @ VGS = 10 V, ID = 24 A * Low Gate Charge (Typ. 105 nC) * Low Crss (Typ. 45 pF) * 100% Avalanche Tested * Improved dv/dt Capability * These Devices are Pb *Free and are RoHS Compliant Applications * Lighting * Uninterruptible Power Supply * AC *DC Power Supply www.onsemi.com . |
FDH50N50 Datasheet
The FDH50N50 is a N-Channel MOSFET.
| Part Number | FDH50N50 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance an.
*With TO-247 packaging *With low gate drive requirements *Easy to drive *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V. |
| Part Number | FDH50N50 |
|---|---|
| Description | 500V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to min.
* 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V * Low gate charge ( typical 105 nC) * Low Crss ( typical 45 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plan. |