| Part Number | FDMA430NZ Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe.
Features
• RDS(on) = 40 mW at VGS = 4.5.
* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A * RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A * Low Profile * 0.8 mm Maximum in the New Package MicroFET 2x2 mm * HBM ESD Protection Level > 2.5 kV Typical (Note 3) * Free from Halogenated Compounds and Antimony Oxides * This Device is Pb *Free, Halide Free. |