The FDMB3800N is a Dual N-Channel MOSFET.
| Mount Type | Surface Mount |
|---|---|
| Pins | 8 |
| Height | 800 µm |
| Length | 3 mm |
| Width | 1.9 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDMB3800N Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
These N−Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching p.
* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A * Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling Capability * This Device is Pb *Free, Halide Free and is RoHS Comp. |
| Part Number | FDMB3800N Datasheet |
|---|---|
| Description | Dual N-Channel PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain sup.
* RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability. * RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 1000 | 462+ : 0.8123 USD 513+ : 0.731 USD 1000+ : 0.6741 USD 10000+ : 0.6011 USD |
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| Verical | 28900 | 462+ : 0.8123 USD 513+ : 0.731 USD 1000+ : 0.6741 USD 10000+ : 0.6011 USD |
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| Verical | 5423 | 462+ : 0.8123 USD 513+ : 0.731 USD 1000+ : 0.6741 USD 10000+ : 0.6011 USD |
View Offer |