Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
- RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V.
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability.
- RoHS Compliant
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dis.
FDMB3800N Datasheet
