FDMB3800N Datasheet | Fairchild Semiconductor

FDMB3800N Dual N-Channel Power Trench® MOSFET January 2006 Dual N-Channel Power Trench® MOSFET 4.8A, 30V, 40mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. REE I DF Features - RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(ON) - High power and current handling capability. - Ro HS...