FDMB3800N Datasheet | onsemi

MOSFET - Dual, N-Channel, POWERTRENCH) 30 V, 4.8 A, 40 m W General Description These N- Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required. Features - Max r DS(on) = 40 m W at VGS = 10 V, ID = 4.8 A - Max r DS(on) = 51 m W at VGS = 4.5 V, ID = 4.3 A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low r DS(on) - High Power and Current Handling Capability - This Device is Pb- Free, Halide Free and is Ro HS pliant MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current - Continuous TA = 25°C (Note 1a) - Pulsed ±20 A 4.8 9 PD Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 1.6 0.75 - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise...