Description
These N
Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A.
- Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low rDS(on).
- High Power and Current Handling Capability.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant
MOSFET.
FDMB3800N Datasheet
