FDMB3800N Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

FDMB3800N dual n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMB3800N
Manufacturer	onsemi
File Size	210.51 KB
Description	Dual N-Channel MOSFET
Download	FDMB3800N Download (PDF)

General Description

These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.

Overview

MOSFET – Dual, N-Channel, POWERTRENCH) 30 V, 4.8 A, 40 mW FDMB3800N.

Key Features

Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A.
Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability.
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

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