FDMB3800N Description
These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDMB3800N Key Features
- Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A
- Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- This Device is Pb-Free, Halide Free and is RoHS pliant
- Continuous TA = 25°C (Note 1a)
- Pulsed
- 55 to +150 °C