| Part Number | FDMC5614P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is a rugged gate version of onsemi’s
advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.
* Max rDS(on) = 100 mW at VGS = *10 V, ID = *5.7 A * Max rDS(on) = 135 mW at VGS = *4.5 V, ID = *4.4 A * Low Gate Charge * Fast Switching Speed * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling Capability * These Devices are Pb *Free and are RoHS Complia. |
FDMC5614P Datasheet and Specifications PDF
The FDMC5614P is a P-Channel MOSFET.
| Part Number | FDMC5614P Datasheet |
|---|---|
| Description | P-Channel PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed
This P-Channel MOSFET is a rugged gate version of Fairchild .
General Description
* Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A * Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A * Low gate charge * Fast switching speed This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power . |