FDMC5614P Description
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).
FDMC5614P Key Features
- Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
- Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
- Low gate charge
- Fast switching speed