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FDMC5614P - P-Channel PowerTrench MOSFET

Description

Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process.

Features

  • General.

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Datasheet Details

Part number FDMC5614P
Manufacturer Fairchild Semiconductor
File Size 531.32 KB
Description P-Channel PowerTrench MOSFET
Datasheet download datasheet FDMC5614P Datasheet
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FDMC5614P P-Channel PowerTrench® MOSFET FDMC5614P P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ May 2014 Features General Description „ Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A „ Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A „ Low gate charge „ Fast switching speed This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS Compliant Application „ Power management „ Load switch „ Battery protection Top Bottom D5 Pin 1 S SG S D6 D7 DD D D D8 MLP 3.3x3.
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