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FDMC5614P Datasheet P-Channel MOSFET

Manufacturer: onsemi

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General Description

This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process.

It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V − 20 V).

Overview

MOSFET – P-Channel, POWERTRENCH) -60 V, -13.5 A, 100 mW FDMC5614P,.

Key Features

  • Max rDS(on) = 100 mW at VGS =.
  • 10 V, ID =.
  • 5.7 A.
  • Max rDS(on) = 135 mW at VGS =.
  • 4.5 V, ID =.
  • 4.4 A.
  • Low Gate Charge.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDMC5614P P-Channel PowerTrench MOSFET Fairchild Semiconductor

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