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FDMC5614P - P-Channel MOSFET

Description

This P

advanced POWERTRENCH process.

20 V).

Features

  • Max rDS(on) = 100 mW at VGS =.
  • 10 V, ID =.
  • 5.7 A.
  • Max rDS(on) = 135 mW at VGS =.
  • 4.5 V, ID =.
  • 4.4 A.
  • Low Gate Charge.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDMC5614P

Datasheet Details

Part number FDMC5614P
Manufacturer ON Semiconductor
File Size 183.63 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC5614P Datasheet
Additional preview pages of the FDMC5614P datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -60 V, -13.5 A, 100 mW FDMC5614P, FDMC5614P-L701 General Description This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V − 20 V). Features • Max rDS(on) = 100 mW at VGS = −10 V, ID = −5.7 A • Max rDS(on) = 135 mW at VGS = −4.5 V, ID = −4.4 A • Low Gate Charge • Fast Switching Speed • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability • These Devices are Pb−Free and are RoHS Compliant Applications • Power Management • Load Switch • Battery Protection DATA SHEET www.onsemi.com Pin 1 SS SG DDDD Top Bottom WDFN8 3.3x3.3, 0.
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