FDMC5614P Description
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V − 20 V).
FDMC5614P Key Features
- Max rDS(on) = 100 mW at VGS = -10 V, ID = -5.7 A
- Max rDS(on) = 135 mW at VGS = -4.5 V, ID = -4.4 A
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS pliant