| Part Number | FDMC610P |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET has been designed specifically to improve
the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM co.
* Max rDS(on) = 3.9 mW at VGS = *4.5 V, ID = *22 A * Max rDS(on) = 6.4 mW at VGS = *2.5 V, ID = *16 A * State *of *the *art Switching Performance * Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency * Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity t. |
FDMC610P Datasheet
The FDMC610P is a P-Channel MOSFET.
| Part Number | FDMC610P |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM co.
* Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A * Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A * State-of-the-art switching performance * Lower output capacitance, gate resistance, and gate charge boost efficiency * Shielded gate technology reduces switch node ringing and increases immunity t. |