| Part Number | FDMC6686P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness.
Features
• Max RDS(on) = 4 mW at VGS = −4.5 V, .
* Max RDS(on) = 4 mW at VGS = *4.5 V, ID = *18 A * Max RDS(on) = 5.7 mW at VGS = *2.5 V, ID = *16 A * Max RDS(on) =11.5 mW at VGS = *1.8 V, ID = *11 A * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * . |
FDMC6686P Datasheet and Specifications PDF
The FDMC6686P is a P-Channel MOSFET.
| Part Number | FDMC6686P Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A High performance trench technology for extreme.
General Description
* Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A * Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A * Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used su. |