Datasheet Summary
FDMC6686P P-Channel PowerTrench® MOSFET
February 2015
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 4 mΩ
Features
General Description
- Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
- Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
- Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and RoHS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Applications
- Load Switch
- Battery Management
-...
