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FDMC6686P - MOSFET

General Description

Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A High performance trench technology for extremely low rDS(on) High power and current handling capability

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMC6686P P-Channel PowerTrench® MOSFET February 2015 FDMC6686P P-Channel PowerTrench® MOSFET -20 V, -56 A, 4 mΩ Features General Description „ Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A „ Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A „ Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.