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FDMC6686P - P-Channel MOSFET

General Description

This P

POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness.

Key Features

  • Max RDS(on) = 4 mW at VGS =.
  • 4.5 V, ID =.
  • 18 A.
  • Max RDS(on) = 5.7 mW at VGS =.
  • 2.5 V, ID =.
  • 16 A.
  • Max RDS(on) =11.5 mW at VGS =.
  • 1.8 V, ID =.
  • 11 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDMC6686P
Manufacturer onsemi
File Size 318.38 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC6686P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -20 V, -56 A, 4 mW FDMC6686P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features • Max RDS(on) = 4 mW at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 5.7 mW at VGS = −2.5 V, ID = −16 A • Max RDS(on) =11.5 mW at VGS = −1.