FDMC6688P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.
FDMC6688P Key Features
- Max RDS(on) = 6.5 mW at VGS = -4.5 V, ID = -14 A
- Max RDS(on) = 9.8 mW at VGS = -2.5 V, ID = -11 A
- Max RDS(on) = 20 mW at VGS = -1.8 V, ID = -9 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
- This Device is Pb-Free, Halide Free and is RoHS pliant