| Part Number | FDMC6688P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.
Features
Max RDS(on) = 6.5 mW at VGS = −4.5 V.
* Max RDS(on) = 6.5 mW at VGS = *4.5 V, ID = *14 A * Max RDS(on) = 9.8 mW at VGS = *2.5 V, ID = *11 A * Max RDS(on) = 20 mW at VGS = *1.8 V, ID = *9 A * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * . |
FDMC6688P Datasheet and Specifications PDF
The FDMC6688P is a P-Channel MOSFET.
| Part Number | FDMC6688P Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extreme.
General Description
* Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A * Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A * Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used su. |