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FDMC6688P - MOSFET

General Description

Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC6688P P-Channel PowerTrench® MOSFET February 2015 FDMC6688P P-Channel PowerTrench® MOSFET -20 V, -56 A, 6.5 mΩ Features General Description „ Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A „ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A „ Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.