FDMC6688P Description
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Lead-free and RoHS pliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®...
FDMC6688P Key Features
- Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
- Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
- Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Lead-free and RoHS pliant