| Part Number | FDMC86160ET100 |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is we.
* Extended TJ Rating to 175°C * Shielded Gate MOSFET Technology * Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A * Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A * High Performance Technology for Extremely Low rDS(on) * Termination is Lead−free and RoHS Compliant Applications * Bridge Topologies * Synchron. |