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FDMC86160ET100 Datasheet

The FDMC86160ET100 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDMC86160ET100
Manufactureronsemi
Overview This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is we.
* Extended TJ Rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
* Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
* High Performance Technology for Extremely Low rDS(on)
* Termination is Lead−free and RoHS Compliant Applications
* Bridge Topologies
* Synchron.
Part NumberFDMC86160ET100
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely . General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFE.