FDMQ8203 Datasheet and Specifications PDF

The FDMQ8203 is a Dual N-Channel and Dual P-Channel Power MOSFET.

Key Specifications

Mount TypeSurface Mount
Pins12
Height800 µm
Length5 mm
Width4.5 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFDMQ8203 Datasheet
Manufactureronsemi
Overview This quad mosfet solution provides ten−fold improvement in power dissipation over diode bridge. Features • Q1/Q4: N−Channel ♦ Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A ♦ Max RDS(on) = 175 mΩ at VGS.
* Q1/Q4: N
*Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P
*Channel
* Max RDS(on) = 190 mΩ at VGS =
*10 V, ID =
*2.3 A
* Max RDS(on) = 235 mΩ at VGS =
*4.5 V, ID =
*2.1 A Applications
* High
*Efficiency Bridge Rectifiers
* Substantial E.
Part NumberFDMQ8203 Datasheet
DescriptionDual N-Channel and Dual P-Channel PowerTrench MOSFET
ManufacturerFairchild Semiconductor
Overview Q1/Q4: N-Channel „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel „ Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A „ Max rDS(on) = 235. General Description Q1/Q4: N-Channel
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel
* Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
* Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
* Substantial efficiency benefit in PD solutio.

Price & Availability

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