The FDMQ8203 is a Dual N-Channel and Dual P-Channel Power MOSFET.
| Mount Type | Surface Mount |
|---|---|
| Pins | 12 |
| Height | 800 µm |
| Length | 5 mm |
| Width | 4.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDMQ8203 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This quad mosfet solution provides ten−fold improvement in power
dissipation over diode bridge.
Features
• Q1/Q4: N−Channel
♦ Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A ♦ Max RDS(on) = 175 mΩ at VGS.
* Q1/Q4: N *Channel * Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A * Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A * Q2/Q3: P *Channel * Max RDS(on) = 190 mΩ at VGS = *10 V, ID = *2.3 A * Max RDS(on) = 235 mΩ at VGS = *4.5 V, ID = *2.1 A Applications * High *Efficiency Bridge Rectifiers * Substantial E. |
| Part Number | FDMQ8203 Datasheet |
|---|---|
| Description | Dual N-Channel and Dual P-Channel PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Q1/Q4: N-Channel Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Q2/Q3: P-Channel Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A Max rDS(on) = 235.
General Description
Q1/Q4: N-Channel * Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A * Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel * Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A * Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A * Substantial efficiency benefit in PD solutio. |
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