FDMQ8203 Datasheet | Fairchild Semiconductor

FDMQ8203 Dual N-Channel and Dual P-Channel Power Trench® MOSFET December 2011 Green Bridge TM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel Power Trench® MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel - Max r DS(on) = 110 mΩ at VGS = 10 V, ID = 3 A - Max r DS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel - Max r DS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A - Max r DS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A - Substantial efficiency benefit in PD solutions - Ro HS pliant This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Application - High-Efficiency Bridge Rectifiers Top G4 S4 S4 G3 S3 S3 Bottom D3/ D1/ D4 D2 D3/ D1/ D4 D2 G1 S1 S1 G2 S2 S2 Pin 1 MLP 4.5x5 S3 7 S3 8 Q3 (Pch) Q2 (Pch) 6 S2 5 S2 G3 9 4...