FDMQ8203 Description
N-Channel Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A Substantial efficiency benefit in PD solutions RoHS pliant This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ8203 Key Features
- Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
- Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
- Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
- Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
- Substantial efficiency benefit in PD solutions
- RoHS pliant
- High-Efficiency Bridge Rectifiers
- Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
- 55 to +150