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FDMQ8203 - Dual N-Channel and Dual P-Channel PowerTrench MOSFET

General Description

Q1/Q4: N-Channel Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A Substantial efficiency be

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FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET FDMQ8203 December 2011 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench® MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel „ Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A „ Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A „ Substantial efficiency benefit in PD solutions „ RoHS Compliant This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.