FDMQ8203 Description
This quad mosfet solution provides ten−fold improvement in power dissipation over diode bridge.
FDMQ8203 Key Features
- Q1/Q4: N-Channel
- Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
- Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
- Q2/Q3: P-Channel
- Max RDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
- Max RDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A