| Part Number | FDMS3662 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Fea.
* Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A * Advanced Package and Silicon combination for low RDS(on) * Lowers Switching Noise/EMI * MSL1 Robust Package Design * 100% UIL Tested * These Device is Pb *Free and RoHS Compliant Typical Applications * DC *DC Conversion ABSOLUTE MAXIMUM RATINGS TA =. |
FDMS3662 Datasheet and Specifications PDF
The FDMS3662 is a N-Channel MOSFET.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 8 |
| Height | 1.1 mm |
| Length | 5 mm |
| Width | 6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDMS3662 Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild Semiconductor.
General Description
* Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A * Advanced Package and Silicon combination for low rDS(on) * MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize. |