FDMS3662 Datasheet | Fairchild Semiconductor

FDMS3662 N-Channel Power Trench® MOSFET November 2014 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description - Max r DS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A - Advanced Package and Silicon bination for low r DS(on) - MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. - 100% UIL Tested - Ro HS pliant Application - DC - DC Conversion Top Bottom Pin 1 Pin 1 S Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC =...