FDMS3662 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMS3662 Key Features
- Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A
- Advanced Package and Silicon bination for low RDS(on)
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Device is Pb-Free and RoHS pliant