FDMS3662 - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.9 A.
Advanced Package and Silicon combination for low RDS(on).
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
These Device is Pb.
Free and RoHS Compliant Typical.

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FDMS3662 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMS3662
Manufacturer	onsemi
File Size	468.20 KB
Description	N-Channel MOSFET
Datasheet	FDMS3662 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel POWERTRENCH) 100 V, 39 A, 14.8 mW FDMS3662 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 14.8 mW at VGS = 10 V, ID = 8.