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FDMS3669S - Dual N-Channel MOSFET

General Description

Asymmetric Dual N-Channel MOSFET

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel.
  • Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing This device includes two specialized.

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Datasheet Details

Part number FDMS3669S
Manufacturer onsemi
File Size 663.92 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMS3669S Datasheet

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FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage General Description Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel „ Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.