FDMS3669S Description
Asymmetric Dual N-Channel MOSFET.
FDMS3669S Key Features
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
- Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
FDMS3669S Applications
- Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Ope