FDMS3660S - Asymmetric Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDMS3660S
Manufacturer	ON Semiconductor
File Size	702.36 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3660S Datasheet
Additional preview pages of the FDMS3660S datasheet.

This device includes two specialized N

dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Q1: N.
Channel.
Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
Channel.
Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
These Devices.

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Published: Dec 12, 2021 |