FDMS3660S
Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
Key Features
- Q1: N-Channel
- Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N-Channel
- Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A
- Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
- MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
- These Devices are Pb-Free and are RoHS pliant
