Datasheet4U Logo Datasheet4U.com

FDMS3660S - Asymmetric Dual N-Channel MOSFET

General Description

This device includes two specialized N

dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N.
  • Channel.
  • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
  • These Devices.

📥 Download Datasheet

Datasheet Details

Part number FDMS3660S
Manufacturer onsemi
File Size 702.36 KB
Description Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet FDMS3660S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS3660S Asymmetric Dual N-Channel MOSFET Fairchild Semiconductor
FDMS3660AS MOSFET Fairchild Semiconductor
FDMS3662 MOSFET Fairchild Semiconductor
FDMS3664S MOSFET Fairchild Semiconductor
FDMS3668S MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDMS3662 N-Channel MOSFET
FDMS3664S Dual N-Channel MOSFET
FDMS3669S Dual N-Channel MOSFET
FDMS3602S 25V Asymmetric Dual N-Channel MOSFET
FDMS3604S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS3660S PowerTrench) Power Stage Asymmetric Dual N−Channel MOSFET Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.2 mW at VGS = 4.