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FDMS3660S - Asymmetric Dual N-Channel MOSFET

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
  • Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant February 2015.

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FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant February 2015 General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.