| Part Number | FDMS3660S |
|---|---|
| Manufacturer | onsemi |
| Overview |
This device includes two specialized N−Channel MOSFETs in a
dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co.
Q1: N *Channel * Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A * Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N *Channel * Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A * Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A * Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching. |
FDMS3660S Datasheet
The FDMS3660S is a Asymmetric Dual N-Channel MOSFET.
| Part Number | FDMS3660S |
|---|---|
| Description | Asymmetric Dual N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co.
Q1: N-Channel * Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel * Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A * Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A * Low inductance packaging shortens rise/fall times, resulting in lower switching. |